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| SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT789A SOT-223 +0.2 6.50-0.2 Transistors Unit: mm +0.2 3.50-0.2 Low equivalent on-resistance; RCE(sat) 93mU at 3A. Gain of 300 at IC=2 Amps and Very low saturation voltage. +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -25 -25 -5 -6 -3 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 Features 0.1max +0.05 0.90-0.05 www.kexin.com.cn 1 SMD Type FZT789A Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages * Breakdown Voltages Collector Cut-Off Current Emitter Cut-Off Current Saturation Voltages * Saturation Voltages * Base-Emitter Turn-On Voltage * Symbol V(BR)CBO IC=-100iA V(BR)CEO IC=-10mA V(BR)EBO IE=-100iA ICBO IEBO VCB=-15V VCB=-15V,Ta = 100 VEB=-4V Testconditons Min -25 -25 -5 Typ -40 -35 -8.5 Transistors Max Unit V V V -0.1 10 -0.1 -0.15 -0.25 -0.30 -0.45 -0.30 -0.50 -0.8 -0.8 300 250 200 100 100 225 25 35 400 800 -1.0 iA iA V V V IC=-1A, IB=-10mA VCE(sat) IC=-2A, IB=-20mA IC=-3A, IB=-100mA VBE(sat) IC=-1A, IB=-10mA VBE(on) IC=-1A, VCE=-2V IC=-10mA, VCE=-2V Static Forward Current Transfer Ratio hFE IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 is; d 0.02. fT Cibo Cobo t(on) t(off) IC=-50mA, VCE=-5V, f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA MHz pF pF ns ns Marking Marking FZT789A 2 www.kexin.com.cn |
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